Abstract
The mean adsorption lifetime τ3 of Cs+ on tungsten has been measured in the 1000°—1200°K temperature range, using a pulsed beam technique. Under conditions of low surface coverage and with either Cs or CsI as beam materials τ3=(1.0±0.5)×10−12exp[(23 600±500)/T]secwas obtained. The heat of desorption can be calculated as the energy required to remove an isolated Cs+ ion from the surface of an electrical conductor. The presence of an adsorbed contaminating layer, arising from residual vacuum gases, decreased the Cs+—W binding energy by 0.5 eV and increased the pre-exponential factor by about two orders of magnitude. Anomalous results were obtained when CsCl was used for a beam material, suggesting a reaction between the surface tungsten atoms and atomic chlorine.
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