Abstract
ABSTRACTBoth the crystal nucleation rate and the crystal growth velocity of sputtered amorphous Ag0.055In0.065Sb0.59Te0.29 and Ge4Sb1Te5 thin films used for optical data storage were determined as a function of temperature. Crystals were directly observed using ex-situ atomic force microscopy, and their change in size after each anneal was measured. Between 140°C and 185°C, these materials exhibited similar crystal growth characteristics, but differed in their crystal nucleation characteristics. These observations provide an explanation for the different re-crystallization mechanisms observed upon laser-induced crystallization of amorphous marks.
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