Abstract
The kinetics of intrinsic and arsenic-enhanced solid phase epitaxy (SPE) have been measured in buried amorphous Si (a-Si) layers in which crystallization occurs free from the rate retarding effects of hydrogen. Surface a-Si layers, where H infiltration can occur during crystallization, have also been studied. A single 1.45×1016 As/cm2 implant at 1200 keV was used to form an As concentration profile with a peak concentration of 3×1020 As/cm3 centered at 8000 Å beneath the crystal surface, allowing many different enhanced SPE rates to be examined simultaneously. The SPE rate through this profile and its intrinsic counterpart were measured using time-resolved reflectivity. The effects of hydrogen on the SPE rate can be determined by a comparison between the buried and surface a-Si layers. For the surface a-Si layers, it was found that the As-enhanced SPE rate versus depth curve is offset with respect to the concentration profile. We attribute this offset to the H infiltration in the case of the surface a-Si layer.
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