Abstract
Intrinsic silicon dioxide deposition rate dependences from tetraethoxysilane (TEOS) thermal pyrolysis were measured in an experimental cold wall low-pressure chemical vapor deposition reactor designed to minimize reactant depletion and gas-phase reactions. The apparent activation energy of 90 kJ mol−1±16 kJ mol−1 over the range of temperatures from 873 to 1073 K is significantly lower than that typically measured in commercial or development-scale hot wall reactors. The reaction rate exhibits a first order dependence on TEOS pressure. Film deposition proceeds without a nucleation-induced incubation period. Interpretation of deposited film profiles in high aspect ratio trenches through rigorous ballistic transport-reaction simulation reveals that deposition most likely occurs through a heterogeneous mechanism in which strong readsorption of the byproducts of TEOS decomposition inhibits silicon dioxide deposition.
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More From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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