Abstract
Abstract We report on indium nitride growth on sapphire substrates by migration-enhanced plasma-assisted metal organic chemical vapor deposition (MEPA-MOCVD). The growth is studied in the temperature range from 700 °C to 957 °C, well above the decomposition temperature of indium nitride in conventional MOCVD. Raman spectroscopy, atomic force microscopy, and X-ray diffraction indicate polycrystalline grainy InN film growth.
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