Abstract
The kinetics of the Schottky barrier formation of In on GaAs(110) surfaces has been studied by photoemission. A temperature dependence of the profile of the n-GaAs(110) surface band bending versus In coverage has been observed. At liquid nitrogen temperature (LNT), the band bending attenuation is observed compared with a room and higher temperature band bending profile. Temperature dependence of the In growth mode is also observed. Spectroscopic evidence indicates that the GaAs band bending is correlated with the In metallic cluster growth. The experimental results are discussed in terms of the unified defect model. A possible transition from Bardeen limit (with pinning centers) to Schottky picture (without pinning centers) of the Schottky barrier formation of In on GaAs(110) is also discussed.
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