Kinetic Simulation of He radio frequency capacitively coupled plasma

M Shihab,M S Afify,N El-Siragy,A Elbadawy

doi:10.21608/djs.2021.190753

Abstract

Radiofrequency capacitively coupled plasma is studied theoretically using a Particle-in-Cell code. For He discharge, the timeaveraged sheaths are in the range of few centimeters. The sheath potential, ion, and electron energy and angular distributions, discharge current, and dissipated power depend on the driven potentials and frequencies. Increasing the amplitude of the high radio frequencies increases the bulk density and the sheath potential and, consequently, increases the plasma processing rate. Increasing the intermediate radio frequency amplitude allows a wider sheath with a broad ion energy distribution and a narrower ion angular distribution. Changing the amplitude and the phase shift between driven frequencies provide different energies and angular distribution allowing performing various processes. The interplay between the sheath and bulk dynamics in the intermediate radiofrequency regime and the high-frequency regime may excite harmonics in the discharge current.

Highlights

Low-temperature plasma has a great potential for numerous applications in the growth and processing of nanomaterials and the fabrication of microelectronics, e.g., carbon nanotubes, nanowires, thin-film depositions, and anisotropic etching of metallic, semiconductor, and dielectric© Faculty of Science, Tanta University.materials
The sheath potential, ion, and electron energy and angular distributions, discharge current, and dissipated power depend on the driven potentials and frequencies
We try to reveal the effect of the amplitude of driven radio frequencies and their phase shift on the discharge dynamics, the ion energies and the ion angular distribution at electrodes, the electron distribution, and the dissipated power in the plasma

Summary

Introduction

Low-temperature plasma has a great potential for numerous applications in the growth and processing of nanomaterials and the fabrication of microelectronics, e.g., carbon nanotubes, nanowires, thin-film depositions, and anisotropic etching of metallic, semiconductor, and dielectric. The energy of incident ions on substrates determines the process type and the flux of ions determines the rate of the process. In this contribution, we study Helium (He) discharge utilizing the Particle-In-Cell technique. We study Helium (He) discharge utilizing the Particle-In-Cell technique We try to reveal the effect of the amplitude of driven radio frequencies and their phase shift on the discharge dynamics, the ion energies and the ion angular distribution at electrodes, the electron distribution, and the dissipated power in the plasma.

Particle-In -Cell

Results and discussion

Summary