Abstract
AbstractUsing an optical reflectivity difference technique, we monitored the growth of multilayer Xe films on a commensurate monolayer of Xe on Ni(111), from 35 to 60K. A transition occurs near 40K, from rough growth at low temperature to quasi-layer-by-layer growth characterized by persistent oscillations in the reflectivity difference. We discuss this transition in terms of changes in the island formation process and the onset of second layer nucleation. The Xe sticking coefficient at 40K is obtained from the period of the oscillations in the reflectivity difference. We find that the sticking coefficient decreases with increasing fihn thickness at fixed Xe pressure.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
