Abstract
AbstractThe roughening evolution of the hydrogenated microcrys‐talline silicon (μc‐Si:H) film by plasma enhanced chemical vapor deposition (PECVD) and hot wire chemical vapor deposition (HWCVD) were investigated using atomic force microscopy (AFM). It is found that the kinetic roughening of the μc‐Si:H film surface can not be described by the traditional dynamic scaling approach. The appearance of characteristic peaks in the power spectral density (PSD) curves, calculated from the AFM images, indicates the mounded growth characteristic of μc‐Si:H film. The correlation between the mounded surface growth of μc‐Si:H thin films and the shadowing effect has been studied. It is found that high hydrogen dilution ratio in the early growth stage retards the formation of the mound structure (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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