Kinetic Processes and Phase-transition of CVD Processes for Ti2SiC3

Abstract

In this paper we present a kinetic model based on numerical simulations of a chemical vapor deposition (CVD) process. We discuss a model that is based on kinetics of the deposition rates to the material. Such a simple model can explain the experimental results. Based on experiments with T i3SiC2 we verify our model. Here different processes of ionized T i, T i and C are important to achieve our stoichiometry. The numerical methods are based on iterative schemes to solve coupled and nonlinear differential equations. The results are discussed with physical experiments to give a valid model for the assumed growth of thin layers.