Kinetic Monte Carlo study on transient enhanced diffusion: posterior to amorphisation process

Abstract

We report our theoretical investigations on the suppression of boron diffusion in the silicon substrate posterior to pre-amorphisation implant (PAI). We numerically investigated the defect-generating behaviour of silicon atoms and their subsequent effect on the transient enhanced diffusion (TED) of boron as a new species for PAI. Our kinetic Monte Carlo simulation revealed that Si–PAI produces more interstitials than the case of Ge–PAI, while Ge–PAI makes interstitial moves further up to the surface than the Si–PAI case during the annealing process, which results in the suppression of the boron TED.