Kinetic Monte Carlo Study on the Suppression of Boron Transient Enhanced Diffusion with Carbon Pre-Implant

Abstract

We report our kinetic Monte Carlo (kMC) study of the effect of carbon co-implantation on the pre-amorphization implant (PAI) process. We employed the BCA (binary collision approximation) approach for the acquisition of the initial as-implanted dopant profile and the kMC method for the simulation of the diffusion process during the annealing. The simulation results implied that carbon co-implantation suppress boron diffusion due to recombination with interstitials. Also, we could compare boron diffusion with carbon diffusion by calculating the reaction of carbon atoms with interstitials, and we found that boron diffusion was affected by the carbon co-implantation energy by enhancing the trapping of interstitials between boron atoms and interstitials. Our KMC simulation implies that the probability of boron's encounterance with interstitial is reduced due to the carbon trapping between boron and an interstitial and that the effectiveness of co-implanted carbon as a interstitial trap is maximized at an implantation energy of 3 keV.