Abstract
Model of In/GaAs(001) molecular beam epitaxial growth is developed to study the processes of droplet epitaxy on the Ga-terminated surface. The model allows computation of significant geometrical characteristics of nanostructures on a large scale and estimating a phase of material by the crystal density. The nucleation and growth mechanisms in a range of indium near-melting temperatures are investigated. Average size of islands is shown to increase with rising substrate temperature whereas the island density demonstrates an inverse relationship between these parameters. An increase of the growth rate intensifies the nucleation processes and leads to an increase in the droplet surface density and decrease in the average droplet diameter. The deposition thickness is observed to have an influence on the island size, but not impact on the surface density of islands.
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