Abstract
A kinetic Monte Carlo (kMC) simulation is conducted to study thegrowth of ultrathin film of Co on Cu(001) surface. The many-body,tight-binding potential model is used in the simulation to representthe interatomic potential. The film morphology of heteroepitaxial Cofilm on a Cu(001) substrate at the transient and final stateconditions with various incident energies is simulated. The Cocovered area and the thickness of the film growth of the first twolayers are investigated. The simulation results show that theincident energy influences the film growth and structure. Thereexists a transition energy where the interfacial roughness isminimum. There are some void regions in the film in the final state,because of the influence of the island growth in the first fewlayers. In addition, there are deviations from ideal layer-by-layergrowth at a coverage from 0 ∼ 2 monolayers (ML).
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