Abstract
AbstractA kinetic model is presented for the deposition of silicon carbide through decomposition of methyltrichlorosilane (MTS). The developed model includes gas phase (homogeneous) reactions that lead to formation of deposition precursors and surface (heterogeneous) reactions that lead or can lead to deposition of silicon carbide, silicon, and carbon. The kinetic model is incorporated in a transport and reaction model for a tubular hot-wall reactor, and the overall reactor model is used to obtain some preliminary results on the effects of pressure and distance in the reactor on the rate of deposition and the composition of the deposit. The results show that the model can reproduce most of the experimental observations of the literature.
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