Abstract
A model is proposed to explain the mechanism of a-Si:H network formation via gas-phase decomposition of silanes. It is based on a set of thermally independent reactions of ·SiH 3 and :SiH 2 radicals with surface Si and Si-H bonds. Some steric limitations of the reactions at the interface gas/solid are taken in focus. It is suggested that such limitations result in a growth mechanism consisting of two parallel processes: 1)propagation of dense Si network covered with a hydrogen enriched surface; 2)pulsed development of polyhydride chains. The competition between these processes results in a Si-H network containing (SiH 2 ) n bubbles. It is shown that density and dimensions of bubbles are kinetically determined by the temperature of the solid phase and by the ratio of ·SiH 3 and :SiH 2 concentrations at the growing surface.
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