Abstract
A new semiphenomenological statistical kinetic model for gradual degradation in semiconductor laser and light-emitting diodes is presented. In this model, the injection of a nonequilibrium electron-hole plasma increases the probability of structural changes and reduces their effective activation energy. Arrhenius-like expressions for the degradation rate with the pre-exponential factor and the effective activation energy as explicit functions of the material parameters are derived. Good agreement with experimental data is obtained.
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