Abstract
We present kinetic lattice Monte Carlo simulations of epitaxial growth of Si and Ge films on the Si (100) surface. Our simulations take into account surface reconstruction, in particular, how it makes the diffusion properties of ad-dimers and adatoms on the surface depend on the direction of motion and whether they are moving over a row or a trough. In the case of Ge expitaxial growth, when dealing with growth of Ge films, we incorporated the effect of Ge-Si exchange through a mechanism involving the ad-dimers. This results in a significant fraction of the first epitaxial layer containing Si, with an abrupt increase at one monolayer of coverage.
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