Abstract
AbstractWe have investigated the effect of selenium additions on the kinetics of the degree and rate of hexagonal to cubic BN conversion (hBN → cBN) as well as on the linear rate of the cBN crystal growth in the BN‐LiH(N,Se) system. Experiments were performed in the temperature range 1940 to 2080 K at a pressure of 4.3 GPa. For 0.5, 1.0, and 3.0 mass% selenium addition, the activation energy of the process of cBN formation is found to be 45.0, 39.0, and 34.0 kJ/mol, respectively. The resulting crystals showed n‐type conduction with a resistivity of 105 to 108 Ω cm and a dislocation density of 105 to 103 cm−2.
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