Kinetic diffusion model of ion-implanted boron during rapid thermal annealing

Abstract

The diffusion of ion-implanted B during rapid thermal annealing (RTA) has been modeled by studying the reaction kinetics between eight species including boron, Si self-interstitials, and vacancies in multiple-charge states. Monte Carlo generated point-defect profiles are used to include the effects of ion-implant damage on the enhanced diffusion of B. Accurate diffusion modeling of high-dose implantation has been achieved with the addition of an extended defect model. The extended defect model describes the absorption and release of Si interstitials corresponding to extended defect formation and annealing, which give rise to the transient-enhanced diffusion of B. Good agreement between the model and experimental results for RTA of ion-implanted B at a dose range of 1×1014–2×1015 cm−2 has been obtained.