Abstract
A new type of electron and hole confinement in semiconductor double heterostructures is discussed. The confinement occurs when the effective mass of charge carriers in the central region is higher than that in the outside regions and it results from a 'kinetic well' produced by the transverse free motion. The calculated density of electron states is similar (but not identical) to that of the potentially confined 2D systems. The effect of an external magnetic field on the system is considered; it is shown that the energies of the kinetically confined states are strongly nonlinear functions of field intensity. Specific structures are described in which the kinetic confinement of electrons or holes would be possible. The kinetic confinement due to band non-parabolicity is also considered and its observation in InAs accumulation layers is reviewed.
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