Abstract
AbstractThe CVD of Si3N4 from SiF4 and NH3 gaseous precursors was studied using a hotwall reactor in the temperature range of 1340 to 1490°C. The effects of temperature, time, flow rate, and SiF4/NH3 molar ratio on deposition rate and axial and radial deposition profiles were identified. The decomposition characteristics of pure NH3 and SiF4 were studied utilizing mass spectroscopy and compared to thermodynamic predictions.
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