Abstract
Metastable Al-rich face-centered-cubic (fcc) TiAlN polycrystals have attracted attention as coating materials. However, the mechanism of chemical vapor deposition (CVD) of TiAlN has yet to be clarified. In this study, we performed a kinetic analysis of fcc-TiAlN deposition by investigating its dependence on deposition temperature and the partial pressures of metal sources. We deposited metastable fcc-Ti0.25Al0.75N polycrystals of a single phase that oriented in the deposition direction from TiCl4/AlCl3/NH3. The activation energy of TiAlN formation around 800 °C was less than 10 kJ/mol. TiAlN was deposited by a first-order reaction with different partial pressures of metal sources. TiAlN was formed by the combined deposition of TiN and AlN. The overall reaction rate constants for TiN and AlN and the mass transfer coefficients of the precursors TiCl4 and AlCl3 had similar values. Therefore, the deposition of fcc-TiAlN under the investigated experimental conditions was limited by precursor diffusion in the reactor.
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