Abstract
Pad temperature measurement using a thermal camera during chemical mechanical planarization (CMP) process is an effective means for monitoring the pad life and removal uniformity. In this study, we present a novel kinematic analysis method based on the principle of energy transformation and conservation to account for the pad temperature rise. The relative speed between the wafer and the pad determines the energy content causing the temperature rise. The pad temperature rise is measured by the thermal image method, with those results agreeing with the prediction of kinematic calculations. The pad temperature is closely related to the outcome of CMP, such as removal rate, uniformity, and pad life. Results in this study provide further insight into the relation between the pad temperature distribution, wafer uniformity, and pad life, thereby contributing to a more effective process control. © 1999 The Electrochemical Society. All rights reserved.
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