Abstract

In this work, we investigate surface potential of the thin silicon-on-insulator field-effect-transistor (SOI-FET) by Kelvin Probe Force Microscope (KFM) at different temperatures. It will be shown that the surface potential changes in the range of temperatures from 15 K to 100 K, indicating increasing number of ionized dopants.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.