Abstract
Progress in epitaxial methodology as well as in nanotechnology opened new routes to custom design novel device structures harboring highly mismatched layers as well as materials far beyond the solubility limit. In this paper we discuss III/V nanostructures as well as SiGeSn alloys grown on Si(100). Taking GaAs/InAs core shell nanowires as an example, the possibility to control the crystal structure enables to fabricate advanced radial/axial heterostructures by phase selective epitaxy. Controlling (GaIn)As/(GaIn)Sb core shell nanowires offer broken and staggered bandgap alignments for the design of advanced tunnel FETs. Finally (Si)GeSn alloys of extraordinary structural quality with Sn concentration up to 14% were deposited by reactive gas source epitaxy. PL and absorption data give evidence for a fundamental direct band gap in these materials. The potential of these materials for ultra-low power electronic devices as well as for optoelectronics is demonstrated.
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