Abstract
Some key integration techniques and issues have been discussed in this paper including fabrication techniques of ferroelectric films, electrode, interface and diffusion problems, etching techniques, stress, hydrogen-induced degradation and barrier interlayer technique, impact of the ferroelectric processing on silicon devices and packaging for the integrated ferroelectric devices. Mechanisms for the breakdown of ferroelectric devices have been analyzed and improved ways have been suggested.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
