Kesan Ketebalan Filem Terhadap Fotoelektrokimia Titania Dioksida (TiO2 ) Yang Disediakan Melalui Kaedah Pemendapan Bantuan Aerosol Wap Kimia (AACVD)

Abstract

Titanium dioxide (TiO2) is a wide band gap semiconductor, which owing to its photoconversion properties in UV spectrum range shows various useful applications. In this study, aerosol-assisted chemical vapor deposition (AACVD) technique was employed to deposite TiO2 thin films with different thickness based on different deposition time (3, 5 and 7 mins). The films were deposited at temperature of 450oC. Using AACVD technique, deposited TiO2 layer on (Fluorin doped tin oxide) FTO glass became very thin layer with compact structure. Titanium diisopropoxide bis(acetylacetonate) and ethanol were used to prepare the AACVD precursor. TiO2 thin film samples were characterized on their morphological and roughness using atomic force microscopy (AFM) which showed a porous morphology structure of the thin films. The optical properties were studied using UV-Vis transmittance spectra and showed the film are highly transparent in the visible region with suitable bandgap were obtained. The performances of the thin films were characterized using linear sweep voltammetry (LSV) and electrochemical spectroscopy (EIS). TiO2 -5 min obtained an average thickness of 61 nm showed the best J-V performance of 6.30 × 10-4 A/cm-2 with lowest charge resistant. In addition, the deposition film obtained also showed excellent adherence to the substrate, reproducible and uniform thin film. Based on the results obtained, the prepared TiO2 using AACVD is very suitable to be used in many applications such as third generation solar cell which require low thickness, porous, highly transparent, photoactive and stable thin film to be applied.