Abstract
Kelvin probe force microscopy (KFM) was successfully applied to the measurement of two-dimensional potential distribution of the cleaved surface of GaAs devices under bias voltage. It was shown that the voltage resolution is less than 10 mV. The measured potential profile of the ungated HEMTs shows a potential knee, which probably originates from the charge trapped at the interface between the epitaxial layer and the substrate. It also shows a potential ridge which corresponds to the channel. Current crowding phenomena are also confirmed to occur at the edge of the drain electrode.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
