Kelvin probe force and surface photovoltage microscopy observation of minority holes leaked from active region of working InGaAs∕AlGaAs∕GaAs laser diode

Abstract

A method for direct observation of carrier leakage from active regions of working semiconductor light-emitting diodes and lasers is suggested. In this method, Kelvin probe force and surface photovoltage microscopies are used to measure local changes in the surface potential of the device mirror on which a high concentration of the leaked carriers is expected. The applicability of the method is demonstrated by studying in detail the leakage current on the mirrors of high-power InGaAs∕AlGaAs∕GaAs laser diodes in action. It is shown that minority holes arrive at the mirror surface from the active zone of the laser and spread over to regions of the n emitter and n substrate. This observation is confirmed by exposing the mirror to external light with photon energy exceeding the band gap of the laser structure and measuring the generated surface photovoltage. Owing to surface channels formed by the surface band bending, the holes can move tens of micrometers from the place of their generation. The leakage currents are evaluated on the basis of the surface potential distributions observed. It is found that as the injection current of the laser increases, the leakage current grows until onset of lasing.