Abstract
ABSTRACTA comparative study of small signal noise has been presented for n+-n-p-p+ double drift region (DDR) impact avalanche and transit time (IMPATT) diode. The comparison is made by taking different semiconductor materials such as silicon, germanium, gallium arsenide, indium phosphide, wurtzite gallium nitride and 4H-silicon carbide, as doping element throughout the Ka band frequency of 26.5–40 GHz. Also, a generalised idea for performing the small signal noise analysis for the IMPATT diode is presented, by taking a one-dimensional mathematical model of DDR IMPATT diode. The 4H-SiC material-based IMPATT diode is proven to be less noisy with noise measure (NM) variation of 17–29 dB in the Ka band, whereas Ge-based IMPATT diode is noisier with the NM value of 34–44 dB. This paper has studied the small signal noise behaviour and is helpful in selecting the proper semiconducting material for the optimum design of the IMPATT diode in the Ka band.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
