Abstract

A Ka‐band substrate integrated waveguide bandpass filter has been designed and fabricated using low temperature co‐fired ceramic (LTCC) technology. The in‐house developed SICCAS‐K5F3 material with a permittivity of 6.2 and a loss tangent of 0.002 was used. The size and surface area of the proposed bandpass filter are reduced by exploiting vertical coupling in vertically laminated three‐dimensional structures. The coupling between adjacent cavities is realized by a narrow slot. A vertical transition structure between the coplanar‐waveguide feed line and the substrate integrated waveguide is adopted to facilitate the internal signal connection. The demonstrated third‐order filter has a compact size of 6.79 mm×4.13 mm×1.34 mm (0.63λ0 × 0.38λ0 × 0.12λ0) and exhibits good performance with a low insertion loss of 1.74 dB at 27.73 GHz and a 3 dB fractional bandwidth of 10 %.

Highlights

  • Substrate integrated waveguide (SIW) has received enormous attention due to its low loss and excellent compatibility with planar circuits [1, 2]

  • SIW is normally composed of waveguide structures defined by two rows of metallic via arrays in a dielectric substrate and sandwiched between two parallel conductor layers [3]

  • Apart from traditional print circuit board technology, SIW components could be fabricated by low temperature cofired ceramic (LTCC) process

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Summary

Introduction

Substrate integrated waveguide (SIW) has received enormous attention due to its low loss and excellent compatibility with planar circuits [1, 2]. In the design of high frequency transmission circuits, the internal signal connection and transition are vitally important, especially in multilayer LTCC package. A CPW-to-stripline vertical transition was utilized for a V-band LTCC system-on-package applications [11]. The resonant cavity is composed of laminated dielectric substrate, parallel conductor layers, and metal via arrays. Few works were reported on the CPWto-CPW vertical transition for LTCC based SIW BPF. A compact Ka-band LTCC SIW BPF with a via-based CPW-to-CPW vertical transition is presented. To validate the proposed scheme, a third-order SIW BPF in Ka-band was designed and fabricated using LTCC technology. It should be noted that an in-house developed LTCC material was used in this work

BPF Design
Fabrication and Measurement
Conclusions
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