Abstract
K-shell X-ray emission of Silicon induced by near-Bohr-velocity ions was systematically investigated in collision systems for which the ratio of projectile-to-target atomic numbers (Z1/Z2) ranged from 0.07 to 3.79. The results show that, in asymmetric collisions, the measured K-shell X-ray production cross sections of Silicon fit very well with the predictions of different direct ionization models depending on the atomic number of projectile. In the case of near-symmetric collisions (Z1/Z2∼1), an obvious enhancement of the X-ray production cross section was observed, which can be attributed to the vacancy transfer within the framework of quasi-molecular model.
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