Kα emission by the electrons with bi-Maxwellian distribution in a Cu foil

Abstract

In our previous research [J. C. Zhao et al., Laser Part. Beams 35, 483 (2017)], we studied the influence of the electron refluxing on the electron transport and Kα emission in a solid target. In this work, the electrons with the bi-Maxwellian distribution of low temperature T1 and high temperature T2 interacting with Cu foil to produce Kα emission are investigated when the electron refluxing effect is included or excluded. Simulation results show that including the refluxing effect, high temperature T2 plays a more significant role in the Kα photon yield, while in the absence of the refluxing effect, the low temperature T1 has a dominant effect. In addition, at the target thickness d ≈ 20 μm, the maximum Kα yield is achieved when the electrons with bi-Maxwellian distribution interact with the Cu target including the refluxing effect. As emitted electrons have the bi-Maxwellian distribution of T1 = 0.1 MeV and T2 = 1.4 MeV, the Kα photon yield is always higher than that in other bi-Maxwellian distributions. Therefore, when the low temperature T1 tends towards a larger value and the high temperature T2 tends towards a smaller one, the maximum Kα photon yield will be obtained whether the electron refluxing effect is considered or not.