Abstract
AbstractA broadband watt‐level power amplifier in a metamorphic high electron mobility transistor (mHEMT) technology is presented at K‐band. The quadruple‐stacked transistor is used to overcome the low breakdown voltage limit of mHEMTs and achieve watt‐level output powers. The fabricated power amplifier using 130‐nm mHEMTs shows an output power of 1.3 W at 18 GHz with a 3‐dB power bandwidth of 58%. To the best of our knowledge, this is the first report of watt‐level single‐chip power amplifiers in mHEMT technology. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2624–2626, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27140
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