Abstract
In this paper, a Doherty power amplifier for K-band point-to-point microwave radio, developed in TriQuint GaAs 0.15-μm PWR pHEMT monolithic technology, is presented. Highly efficient driver stages on both the main and auxiliary branches have been designed and optimized to boost gain with minimal impact on power-added efficiency. The selected architecture enables a modular combination to reach higher power levels. Matching network structures have been designed, according to simple equivalent circuit approaches, to obtain the desired 10% fractional bandwidth. The fabricated power amplifier (PA) exhibits, at 24 GHz in continuous-wave conditions, an output power of 30.9 dBm, with a power-added efficiency of 38% at saturation and 20% at 6 dB of output power back-off, together with a gain of 12.5 dB. System-level characterization at 24 GHz, in very demanding conditions, with a 28-MHz channel 7.5-dB peak-to-average ratio modulated signal, showed full compliance with the standard emission mask, adopting a simple predistorter, with average output power of 23.5 dBm, and average efficiency above 14%. The measured performance favorably compare with other academic and commercial K-band PAs for similar applications.
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