Abstract
In this study, CZTS thin films were grown by a two-stage method involved sputter deposition of metallic Cu, Zn, and Sn layers to form Cu/Sn/Zn/Cu metallic stacks on glass and sulfurization of the metallic stacks at 540 and 580 °C for 1 and 5 min in sulfur vapor atmosphere. The reacted samples at two different sulfurization temperatures and sulfurization times were characterized employing XRD, SEM, EDX, Raman spectroscopy, optical spectroscopy, and Van der Pauw methods. The metallic stacks and CZTS thin films showed Cu-rich and Zn-poor composition. XRD patterns of the reacted films showed almost pure kesterite CZTS phase except for presence of very small amount of Cu 2-x S phase. Raman spectra of the films verified formation of kesterite phase in the films. SEM images showed that the CZTS540-1 sample had more compact, denser and uniform structure. Optical band gap values were found to be in good agreement with the literature. The CZTS540-1 thin film showed the highest carrier concentration and lowest resistivity values amongst the other samples.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
