Junctionless nanosheet gate‐all‐around transistors fabricated on void embedded silicon on insulator substrate

Abstract

A novel junctionless gate-all-around (GAA) transistor with ultrathin nanosheet GAA channel and self-aligned raised source/drain (RSD) is successfully designed and fabricated on void embedded silicon on insulator (VESOI) substrate through a much simpler fabrication process. Devices with as thin as 13-nm nanosheet GAA channel thickness exhibit excellent electrical characteristics: on/off current ratio of 106 and on-state drive current of 58 µA/µm. Although the parasitic planar channel component still exists, the device performance is decisively dominated by the GAA channel, and further boosted by the junction-free bulk conduction mechanism and the self-aligned RSD structure.