Junctionless MOSFETs with laterally graded-doping channel for analog/RF applications

Abstract

In this paper, we propose a laterally graded-channel pseudo-junctionless (GPJL) MOSFET for analog/RF applications. We examine the dynamical performance of GPJL MOSFET and compare it with the common junctionless (JL) MOSFET architecture using a 2-D full-band electron Monte Carlo simulator (MC) with quantum correction. Our results indicate that the GPJL MOSFET outperforms the conventional JL MOSFET, yielding higher values of drain current (I ds), transconductance (g m), and cutoff frequency (f t). Further, the emerging electric field and velocity distributions, as a consequence of the channel engineering introduced by the GPJL MOSFET, result in lower output conductance (g ds) and higher early voltage (V ea). The preeminence of the GPJL transistor over the JL transistor is further illustrated by showing improvements on the intrinsic voltage gain (A vo) in the subthreshold regime, to as high as 61 %. These results indicate that our proposed GPJL MOSFET yields improvement in the analog/RF performance metrics as compared to JL MOSFETs.