Junctionless FETs With a Fin Body for Multi-<inline-formula> <tex-math notation="LaTeX">${V}_{\text{TH}}$ </tex-math> </inline-formula> and Dynamic Threshold Operation

Abstract

In this paper, a n-type junctionless FET (JLFET) with a p-type fin body (FB) is investigated using a 3-D numerical simulator. We show that the proposed device (FB-JLFET) with a p+ FB can control the electrostatic potential of the channel more efficiently for multi- ${V} _{\text{TH}}$ (threshold voltage) and dynamic threshold (DT) operation. Moreover, body bias application is implemented in FB-JLFET and a large body factor ( $\gamma $ ) is predicted for wide range ${V} _{\text{TH}}$ modulation. Thanks to the stronger potential coupling between the channel and FB, the proposed device exhibits $\gamma $ improvement compared to the conventional JL bulk FinFETs under the same electrostatic control. In addition, DT operation is studied in the form of a JLFET for the first time and it exhibits 37% improvement of the on-state drive current and better subthreshold swing (S.S.) compared to FB-JLFET without DT. This paper provides the feasibility of multi- ${V} _{\text{TH}}$ operation with body bias mode for high performance or low-power applications and DT operation for high-speed circuits with low power consumption.