Junctionless Electric‐Double‐Layer Thin‐Film Transistors with Logic Functions

Abstract

Herein, junctionless thin‐film transistors (TFT) with indium‐oxide (In2O3) as the n‐channel active layer are prepared on transparent substrates by magnetron sputtering at room temperature. Chitosan with an electric‐double‐layer (EDL) effect as a gate dielectric enables the device to achieve low‐voltage operation, thus reducing energy consumption. The device maintains its performance in dark or illuminated conditions and has good performance with a mobility of 0.21 cm2 V−1s−1, a current on/off ratio of 6.5 × 106, and a subthreshold swing of 66 mV decade−1. The device implements “OR” and “AND” logic functions at different voltage levels. The In2O3 TFT is ideally suited for prospective applications in large‐area electronics and flexible electronics due to its exceptional device performance and low fabrication temperature.