Abstract
Junction temperature of InAs quantum-dot laser diodes (LDs) is measured by utilizing a forward voltage- temperature method. Although the forward voltage decrease with junction temperature increment is low, the linear relation between forward voltage and temperature clearly occurs. It is found that SiNx is more useful than SiO2 to keep junction temperature low. Injection current to shift the lasing wavelength from ground to excited state is increased over 200 mA by using SiNx instead of SiO2 as the insulating layer. As a result, ground state optical power is doubled.
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