Abstract
For near future 2D and 3D devices, Self-Regulation Plasma Doping (SRPD) with B2H6/Helium gas plasma has been developed to provide precisely controllable ultra-shallow junctions for planar FETs and conformal junctions for fins at the same time. Manufacturing level of process controllability (<1% on dose) and advantage on the dvices of SRPD have been achieved with FinFETs and planar pMOSFETs.
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