Abstract
Abstract The screen printed CdS/CdTe hetero-junctions formed on the (0001), (1120), (1010) surfaces of CdS single crystals have been studied by an X-ray double crystal spectrometer, electron diffraction, transmission electron microscopy (TEM), and EBIC. For CdS/CdTe formed on the CdS (0001) structure, the epitaxiality of the CdTe layer formed on (0001) of CdS was better than that formed on the other surfaces. The diffusion length of minority carriers formed on the single crystal CdS was found to be larger than that of sintered CdS/CdTe junction prepared by the screen printing method especially for the junctions grown on the (0001) plane of CdS.
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