Abstract
AES depth profiles were obtained from nonplanar CuxS/CdS solar cells fabricated by the ’’wet’’ ion exchange technique. The horizontal junction (cap) thickness was determined by utilizing a focused electron beam with a spot size less than the diameter of a single grain. This technique minimized the introduction of profile artifacts caused by the nonplanar junction morphology. The cap thickness was compared to the thickness determined by a conventional electrochemical analysis developed for CuxS. No correlation was found to exist between the two results. The AES depths ranged from 0.08 to 1.16 of the electrochemical result. The S peak shape was also investigated and the identification of the chemical state of the S was used to determine the location of the CuxS/CdS interface. This method agreed well with the crossover in the Cu and Cd profiles.
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