Abstract
A non-contact method for measurement of sheet resistance and leakage current (RsL) for ultra-shallow junction (USJ) characterization is described based on analysis of frequency-dependent junction photovoltages from p-n junctions . Theoretical, device-simulated and measured photovoltages, sheet resistance as well as RsL and reverse-biased diode currents are compared. The linkage between RsL recombination currents and end-of-range implant damage in USJ/halo profiles and deletion layers is described. The addition of a Halo profile to a USJ results in increased in sheet resistance and leakage current due to changes in the junction depth and depletion layer conditions. Measured recombination leakage currents for implanted and CVD-grown USJs are compared with calculation and show good agreement.
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