Junction Leakage Random Telegraph Signals in Arrays of MOSFETs

H Dewitte,A Le Roch,A Jay,P Paillet,A Hemeryck,S Rizzolo,M Jech,V Goiffon

doi:10.1109/led.2021.3112296

Junction Leakage Random Telegraph Signals in Arrays of MOSFETs

H Dewitte, A Le Roch + Show 6 more

https://doi.org/10.1109/led.2021.3112296

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Journal: IEEE Electron Device Letters

Publication Date: Nov 1, 2021

Affiliation: National Higher French Institute of Aeronautics and Space, Université de Toulouse, French National Centre for Scientific Research, Laboratory for Analysis and Architecture of Systems, CEA DAM Île-de-France, Atomic Energy and Alternative Energies Commission, Airbus (France), TU Wien

#Ab Initio Molecular Dynamic Simulations #Signals In Arrays + Show 8 more

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Abstract

This letter presents an experimental study of the junction leakage RTS (JL-RTS) in a large set of MOSFET p-n junctions. Arrays of MOSFETs are used to statistically study the effects of the temperature, the electric field, and the source/drain design. The results, supported by ab initio molecular dynamic simulations, advocate for the adoption of the structural fluctuation model over the state charge fluctuation model to describe the defects at the origin of the phenomena.

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