Abstract
Copper indium diselenide (CIS) is electrodeposited in a single step on chemical bath deposited cadmium sulfide layers in order to form a superstrate cell structure. The influence of the electrodeposition potential on junction formation is studied by solid‐state photocurrent voltage and photocurrent spectral responses. Secondary ion mass spectroscopy depth profiling shows that cadmium and sulfur diffusion from the CdS layer into the CIS layer is small up to annealing temperatures of 320°C. The diffusion process is found to be related to the composition of the CIS film, which in turn is determined by the electrodeposition potential. Interdiffusion processes are hindered in indium‐rich CIS films. A preliminary CIS superstrate cell characteristic is presented yielding an efficiency of 1.5%. © 1999 The Electrochemical Society. All rights reserved.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
