Abstract
The vacancy-enhanced rapid diffusion of N-type dopants especially phosphorus has been a hurdle for the development of germanium based complementary metal-oxide-semiconductor (CMOS) technology. Phosphorus diffuses quickly in germanium via the formation of Phosphorus-Vacancy (P-V) pairs. Trapping vacancies thus slowing down the rapid P diffusion by some elements like carbon, nitrogen and fluorine has proved to be effective. In this work, the junction control by carbon and P co-implantation in pre-amorphized germanium is investigated systematically. It is found that when the implanted C sits at the half range of the pre-amorphized germanium layer, the vacancy-enhanced diffusion of phosphorus and the resultant junction depth can be well controlled.
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