Abstract
We report here the fabrication of Josephson junction tunnel diodes in which the barrier has been deposited using the Langmuir-Blodgett technique. Diodes have been fabricated using lead-indium alloys and niobium nitride for the electrodes. The barrier was vinyl stearate polymerized by Co <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">60</sup> γ radiation just prior to depositing the counter electrode. We have obtained critical current densities from 100-820 amps/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at 4.2°K, and we have observed hysteretic behavior. Preliminary measurements of the dependence of the critical current on the applied magnetic field have also been made.
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